How Does The Band Gap Of CdSe Compare To Other Semiconductor Materials?

The band gap of CdSe is relatively small compared to other semiconductor materials. Specifically, the band gap of CdSe is about 1.7 eV, which is smaller than the band gaps of commonly used semiconductors such as silicon (1.1 eV), GaAs (1.4 eV), and InP (1.3 eV). This means that CdSe requires less energy to excite an electron from the valence band to the conduction band, making it a favorable material for optoelectronic applications such as solar cells and light-emitting diodes. However, the small band gap also makes CdSe more prone to thermal and optical degradation, as well as recombination of electron-hole pairs.