Beryllium Telluride

Beryllium telluride (BeTe) is a binary compound consisting of beryllium (Be) and tellurium (Te). It has a zincblende crystal structure with a lattice constant of 5.77 angstroms. BeTe is a wide-bandgap semiconductor with a direct bandgap energy of 2.69 electron volts at room temperature.

BeTe can be synthesized by reacting beryllium and tellurium in a vacuum or inert atmosphere at high temperatures. It has a high thermal conductivity and is stable at high temperatures, making it useful in thermal management applications. BeTe is also used as a substrate for growing other semiconductors, such as gallium arsenide (GaAs) and indium antimonide (InSb).

However, BeTe is toxic and poses health risks if ingested or inhaled. Therefore, proper handling and disposal procedures must be followed when working with this compound.