Boron Arsenide

Boron arsenide is a compound consisting of boron and arsenic atoms with a chemical formula of BAs. It belongs to the III-V semiconductor family, which includes compounds with elements from groups III and V of the periodic table.

Boron arsenide has a zinc-blende crystal structure and is a direct bandgap semiconductor. Its bandgap energy is approximately 1.5 eV at room temperature, which makes it suitable for use in electronic and optoelectronic devices such as solar cells and light-emitting diodes.

Boron arsenide also exhibits high thermal conductivity, which makes it a promising material for use in electronic and thermal management applications. However, its properties are still being studied, and more research is needed to fully understand its potential uses and limitations.

Overall, boron arsenide is an interesting semiconductor material with unique properties that make it a promising candidate for various applications in the future.