What Is The Effect Of Doping On The Band Gap Of CdSe?

Doping refers to the intentional introduction of impurities into a semiconductor material in order to alter its electrical and optical properties. In the case of CdSe, doping with certain impurities such as Mn, Te, or Cl has been shown to have an impact on the band gap energy of the material.

Specifically, doping with Mn or Te impurities can lead to a narrowing of the band gap of CdSe, resulting in a shift towards longer wavelengths in the absorption spectrum. This is due to the introduction of additional electronic states within the band gap, which can trap electrons and promote radiative recombination.

On the other hand, doping with Cl impurities can lead to an increase in the band gap energy of CdSe, resulting in a shift towards shorter wavelengths in the absorption spectrum. This is thought to be due to the formation of CdCl complexes that act as acceptors, effectively reducing the number of available electrons and increasing the effective band gap energy.

Overall, the effect of doping on the band gap of CdSe depends on the type and concentration of impurities introduced, and can have important implications for the material's electronic and optical properties.