What Is The Bandgap Energy Of Aluminium Nitride?

Aluminium nitride (AlN) is a compound semiconductor with a wide bandgap energy that falls within the ultra-violet (UV) range of the electromagnetic spectrum. The bandgap energy of AlN varies depending on its crystalline structure and doping concentration.

In its most common form, which is hexagonal wurtzite crystal structure, the bandgap energy of AlN is approximately 6.2 electron volts (eV), corresponding to a wavelength range of about 200 nanometers (nm). This makes AlN highly transparent to visible light but highly opaque to UV radiation. As the doping concentration increases, the bandgap energy decreases, allowing for the absorption of lower-energy photons and extending its spectral response towards the visible region.

The wide bandgap of AlN makes it an attractive material for a variety of applications such as high-power electronic devices, deep ultraviolet light-emitting diodes (LEDs), and high-frequency acoustic devices. It also exhibits excellent thermal conductivity, making it ideal for use in high-temperature environments where heat dissipation is critical.