Cdse Bulk Band Gap

The bulk band gap of the compound CdSe refers to the energy difference between its highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) in its bulk crystalline form. This bandgap determines the wavelength of light that the compound can absorb or emit, and is an important parameter for many applications such as optoelectronics and photovoltaics.

The value of the bulk band gap for CdSe typically ranges from 1.7 to 1.9 electron volts (eV), depending on the specific growth conditions and crystal structure. This places CdSe in the range of semiconductors, with a bandgap that is larger than that of metals but smaller than that of insulators.

It should be noted that the bulk band gap of CdSe may differ from its bandgap in other forms, such as nanocrystals or thin films, due to quantum confinement effects and surface states. Therefore, the specific application and intended use of CdSe should be carefully considered when selecting the appropriate form of the material.