What Is The Impact Of Strain On The Band Gap Of CdSe?

When a material is subjected to strain, it can affect the electronic band structure and alter the band gap. In the case of CdSe, strain can induce changes in the crystal lattice and alter the distance between atoms, leading to changes in the electronic properties.

Specifically, compressive strain can cause the conduction band to shift upwards relative to the valence band, resulting in a decrease in the band gap. On the other hand, tensile strain can cause the conduction band to shift downwards relative to the valence band, resulting in an increase in the band gap.

This behavior is due to the fact that compressive strain tends to push the atoms closer together, increasing the overlap between atomic orbitals and enhancing the possibility of electron delocalization. Conversely, tensile strain tends to pull the atoms apart, decreasing overlap and reducing the delocalization of electrons.

Overall, the effect of strain on the band gap of CdSe can be significant and needs to be carefully considered when designing CdSe-based devices.