Bismuth(III) Titanate

Bismuth(III) titanate, also known as BiT or BiTiO3, is a ferroelectric material with the chemical formula Bi4Ti3O12. It has a perovskite crystal structure and is composed of bismuth oxide and titanium oxide ions.

BiT is a promising material for use in electronic devices such as capacitors, piezoelectric sensors, and memory devices due to its unique properties, including high dielectric constant, low leakage current, and large electromechanical coupling coefficient. Additionally, BiT exhibits excellent radiation resistance and is therefore suitable for use in space applications.

However, the synthesis and processing of BiT are challenging due to its high melting point and difficulty in producing stoichiometric compositions. Techniques such as solid-state reaction, sol-gel method, and hydrothermal synthesis have been employed to prepare BiT in various forms, including thin films, bulk ceramics, and nanoparticles.

Overall, the detailed understanding of the properties and synthesis of BiT is critical for the development of advanced electronic materials and devices.